International Technology Roadmap for Semiconductors (ITRS) sustained action to find alternative materials silicon global attention, the industry is hoping to find a way to achieve ultra-fast 2D perfectly conducting material. Graphene and its derivative versions of carbon nanotubes (CNT) has been the most popular technology is promising, but the black phosphorus application in photonics has demonstrated superior properties of graphene.

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Recently, McGill University (McGill University) and the University of Montreal, Canada (Universite de Montreal), researchers have claimed, 2D monolayer black phosphorus – phosphorus-ene (phosphorene), able to demonstrate superior pure graphene and silicon circuit electronic properties.

2D conductive material advantage lies in its ability to achieve speeds approaching superconductivity at room temperature, plus is ideally suited for extending ITRS development blueprint – the future will require the continuation of Moore’s single-atom level (Moore “s Law) progress Unfortunately, Any single material atoms are very fragile and must be found and are 2D can be deposited in the form of a multi-layer of conductive material.

“Our research shows can induce electron movement in the form of a plurality of 2D black phosphorus atom layer,” Professor Thomas Szkopek McGill University, explained, “on the grounds purely scientific point of view, we still do not know how electrons move in the limited 2D details; in technical terms, this is because the electronic components in the electronic limited to 2D functions better when the show. ”

At room temperature, alkylene phosphorus electron mobility has been measured up to silicon (2700cm2 ?? / Vs) 2 times, and in cooling (3900cm2 / Vs) nearly three times as high as expected for compatibility with the substrate electrode After the optimization, but also to achieve a higher electron mobility. The disadvantage is that black phosphorus monolayer has behaved not stable enough, unless it can be isolated from normal atmospheric environment protection among. However, researchers at McGill University, thought it is not considered too serious problem, because they have been found to even penetrate multiple layers of conductive material 2D electrons move in black phosphorus.

“We all know that the stability of black phosphorus deficiency, unless isolated from the environment of preventive and protective measures. Furthermore, the black phosphorus single thinner, more unstable.” Szkopek said, “but according to our observations, is not We need to see the motion of electrons in the 2D black phosphorus single atomic layer, which is of great significance for the future of the black substance phosphorus components development.

To prove this point, researchers will create dark phosphorus into the quantum well field effect transistor (FET) bare grain, it can easily be turned to value and set off a current of more than 100,000. Even if the material is manufactured using a multi-layer, the researchers were also able to show the use of magneto-2D carrier transmission measurements. In addition, the researchers also predict that phospholene FET can work at very low voltage, low power operation.

Future researchers will be the best phospholene best dielectric layers and experiments, hoping to create a phospholene FET and the best metal contacts. In addition to optimization, the researchers plan to study methods and how the large-scale manufacture of such materials in the fab.

McGill University professor Guillaume Gervais, Professor, University of Montreal, Richard Martel also participated in the study. The study of magnetic field experiments in Florida National High Magnetic Field Laboratory carried out; the laboratory by the National Science Foundation (NSF), Florida and the US Department of Energy (DoE) co-sponsored support.