The next generation of revolutionary storage technology: storage-level memory (SCM)

Storage-class memory (SCM), also known as persistent memory, is a composite storage technology that combines both traditional storage and memory characteristics. Since storage-level memory can provide more memory than flash Faster read / write speeds are cheaper than DRAMs in terms of cost and are expected to be the next generation of revolutionary storage technologies, both from the performance side and from the application side.

Strictly speaking, the storage level memory is not entirely memory, not entirely traditional storage device, although it is like DRAM can be embedded into the motherboard slot, but its computing speed slower than DRAM, and even in the Loss of power in the state can still continue to save data, at this point is relatively close to the characteristics of traditional storage devices. NJU7221L20

However, compared to traditional storage devices, storage-level memory not only in the read and write data to provide faster speed, while the erase and write data when the program also has greater flexibility, unlike the general flash memory is very Easy to wear and tear because of high frequency read and write times.

Interestingly, the storage-level memory can process data in bytes or blocks at the same time, giving the operating system, software, and virtual machine hypervisor the developer , In the use of storage-level memory as a medium application device to obtain greater flexibility.

For example, the operating system would initially view storage-level storage as a block storage device formatted by the file system and a database with compatibility capabilities, but the next-generation application might choose to map directly through memory Memory-mapped files to access storage-level storage, and the virtual machine monitor can allocate separate areas of the storage-level memory to different virtual machines for use as program execution memory, or the like Flash memory storage resources. 2SD466

Compared with the use of traditional DRAM, the biggest difference between the storage-level memory is that it can be stored continuously without loss of data due to the interruption of external power supply. In addition, it can process data in units of bytes, The need to store data packages in blocks of 512 consecutive bytes, the combination of these two features is bound to change the future of the application design architecture and manner.

On the current status of development, the storage level of memory technology is expected to be in the end of 2016 into the practical application stage, the beginning will be made by Intel (Intel) 3D XPoint technology architecture come out on top, and Hewlett-Packard (HP) and SanDisk In the past has also been announced to cooperate in the development of SCM technology, but the fastest may have to wait until 2017 or later have the opportunity to really come out.

As with any emerging technology, the early use of storage-level storage may be limited to specific industries and uses, especially in the performance of price and performance considerations, most of this technology can only be applied to specific areas, Including in-memory computing, high-performance computing, and server-side caching, are likely to be early adopters of storage-level storage.

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